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NUS6189MN
MAXIMUM RATINGS
Rating
V IN to Ground
Gate2 Voltage to Ground
Control Pin to Ground
Shunt Voltage (OVP OUT to Batt)
Maximum Power Dissipation (T A = 50 ° C, Notes 1 & 3)
Symbol
V IN
V G2
V CNTRL
V shunt
P D
Value
-0.3 to 30
-0.3 to 30
-0.3 to 13
12
1.2
Unit
V
V
V
V
W
Thermal Resistance, Junction-to-Air (Note 1)
Average q for chip, minimum copper
Maximum q for power device, minimum copper
Average q , for chip (Note 2)
Maximum q for power device (Note 1)
Average q for chip (Note 1)
Maximum q for power device (Note 1)
Operating Case Temperature (Note 4)
Operating Ambient Temperature (P D = 0.5 W, Note 1)
Operating Junction Temperature (All Dice)
Thermal Resistance Junction ? to ? Case (Note 4)
Storage Temperature Range
Continuous Input Current (T A = 50 ° C, Notes 1 & 3)
Gate-to-Source Voltage MOSFET1
Drain-to-Source Voltage MOSFET1
Drain-to-Source Voltage MOSFET2
Collector-Emitter Voltage BJT
Collector-Base Voltage BJT
Emitter-Base Voltage BJT
q J-A
T Cmax
T Amb
T Jmax
Y JC
T stg
I max
V GS1
V DS1
V DS2
V CEO
V CBO
V EBO
137
145
98
103
77
82
125
109
150
30
-65 to 150
2.6
± 8.0
? 12
? 30
? 20
? 20
? 7.0
° C/W
° C
° C
° C
° C/W
° C
A
V
V
V
V
V
V
Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the
Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect
device reliability.
1. Surface ? mounted on FR4 board using 1 inch sq pad size (Cu area = 1.127 in sq [1 oz] including traces).
2. Surface ? mounted on FR4 board using 0.25 inch sq pad size (Cu area = 0.37 in sq [1 oz] including traces).
3. V IN = 6.0 V, all power devices fully enhanced.
4. Surface ? mounted on FR4 board using 400 mm sq pad size, 4 oz Cu, P D < 800 mW.
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